STUDY OF THE STRUCTURE OF (Si2)1-x(GaP)x EPITAXIAL LAYERS USING QUANTUM CHEMICAL CALCULATIONS

Боковая панель статьи

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Опубликован: noy 11, 2023
Ключевые слова:
structure; crystal; nanoclusters; epitaxial layers.

Основное содержимое статьи

Alijon Shonazarovich Razzokov
Amin Safarbaevich Saidov
Khushnudbek Odilbekovich Eshchanov

Аннотация

In this work, the structural structure of (Si2)1-x(GaP)x epitaxial layers and the arrangement of Si atoms in the medium of the GaP crystal lattice were analyzed using ATK-Quantum software. The obtained results showed that the GaP crystal lattice medium is energetically more likely to contain Si2 states.

Информация о статье

Как цитировать
Alijon Shonazarovich Razzokov, Amin Safarbaevich Saidov, & Khushnudbek Odilbekovich Eshchanov. (2023). STUDY OF THE STRUCTURE OF (Si2)1-x(GaP)x EPITAXIAL LAYERS USING QUANTUM CHEMICAL CALCULATIONS. Конференция Ферганского государственного университета, 93–94. извлечено от https://conf.fdu.uz/index.php/conf/article/view/2365
Выпуск
2023: Тенденции развития физики конденсированных сред
Раздел
Физика

Библиографические ссылки

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C. Guo, J. Jia, L. Guo, and H. Wu, “Study on the Structure and Property of the Neutral GaxPy (x+y=8) and Anionic Gallium Phosphide Clusters Using DFT,” Acta Physico-Chimica Sinica, vol. 22, no. 10, pp. 1253-1259, 2006.

A. Sh. Razzokov and K. O. Eshchanov, “Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate,” Journal of Metals, Materials and Minerals, vol. 32, no. 2, pp. 83-87, 2022.