STUDY OF THE STRUCTURE OF (Si2)1-x(GaP)x EPITAXIAL LAYERS USING QUANTUM CHEMICAL CALCULATIONS
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Abstract
In this work, the structural structure of (Si2)1-x(GaP)x epitaxial layers and the arrangement of Si atoms in the medium of the GaP crystal lattice were analyzed using ATK-Quantum software. The obtained results showed that the GaP crystal lattice medium is energetically more likely to contain Si2 states.
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References
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