KANAL KO’NDALANG KESIM SHAKLI HAR XIL BO’LGAN MAYDONIY TRANZITORNI BO’SAG’A KUCHLANISHIGA OKSID QATLAMIDAGI LOKAL ZARYAD KENGLIGINING TA’SIRI

##plugins.themes.bootstrap3.article.main##

Ibroximjon Karimov

Annotatsiya

Annotatsiya. Ushbu maqolada nano o’lchamdagi zatvor bilan to’liq o’ralgan maydoniy tranzistorni bo’sag’a kuchlanishiga zatvor osti oksid qatlamda qamralgan lokal zaryadning kengayib borishini ta’siri o’rganilgan.

##plugins.themes.bootstrap3.article.details##

Bo‘lim
Fizika

Foydalaniladigan adabiyotlar

Takeshi Ohshima1, Masahito Yoshikawa1, Hisayoshi Itoh1, Yasushi Aoki1 and Isamu Nashiyama1., Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation., Copyright (c) 1998 The Japan Society of Applied Physics., Japanese Journal of Applied Physics, Volume 37, Number 8B

Z. Lun, D.S. Ang, and C.H. Ling, “A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET”, IEEE Electron Device Lett., vol. 21, no. 8, pp. 411-413, 2000.

S. Zafar, A. Callegari, V. Narayanan, and S. Guha, “Impact of moisture on charge trapping and flatband voltage in Al2O3 gate dielectric films,” Appl. Phys. Lett., vol. 81, p. 2608, 2002.

W. J. Zhu, T. P. Ma, S. Zafar, and T. Tamagawa, “Charge trapping in ultrathin hafnium oxide,” IEEE Electron Dev. Lett., vol. 23, p. 597, 2002.

M. Houssa, A. Stesmans, M. Naili, and M. M. Heyns, “Charge trapping in very thin high permittivity gate dielectric layers,” Appl. Phys. Lett., vol. 77, p. 1381, 2000.