Si, GaAs VA Ge ASOSIDAGI OMMAVIY NANOSTRUKTURALARDA ZARYAD TASHISH HODISALARINI NURLANISHI TASIRINI O’RGANISH.

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Nashr qilingan: noy 11, 2023
Kalit so‘zlar:
deformatsiya, elektromagnit, rekombinatsiya, elektr maydoni, kontsentratsiya.

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Kuchqarov Behzod Xoshimjanovich
Fazliddinov Solohiddin Baxriddin o’g’li
Xolmirzayev Akrom Abduqodirovich

Annotatsiya

O'tkazuvchanlikni o'rnatish, ya'ni tok tashuvchini taqsimlash funktsiyasining xarakatlanish vaqti elektr maydonidagi zaryad, tufayli statsionar kontsentratsiyani o'rnatish uchun ketadigan vaqt aralashmalar ishtirokida rekombinatsiya va ionlanish, shuningdek, hosil bo'lish paytlarida bir hil bo'lmagan oqim taqsimotlari va elektr maydoni, kuchli maydonda stressli p-Ge da paydo bo'lishi o’rganilgan.

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Qanday qilib iqtibos keltirish kerak
Kuchqarov Behzod Xoshimjanovich, Fazliddinov Solohiddin Baxriddin o’g’li, & Xolmirzayev Akrom Abduqodirovich. (2023). Si, GaAs VA Ge ASOSIDAGI OMMAVIY NANOSTRUKTURALARDA ZARYAD TASHISH HODISALARINI NURLANISHI TASIRINI O’RGANISH. Farg’ona Davlat Universiteti Konferensiyalari, 246–249. Retrieved from https://conf.fdu.uz/index.php/conf/article/view/2349
Maqola
2023: Kondensatsiyalangan moddalar fizikasining rivojlanish tendentsiyalari
Bo‘lim
Fizika

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