MODELING OF CARRIER MOBILITY IN SEMICONDUCTORS AT A WIDE RANGE OF TEMPERATURES

Аннотация

Annotatsion: A modeling procedure is proposed to calculate the effect of temperature on the mobility of both electrons and holes in semiconductor materials Si, Ge, and GaAs. It is obvious that increasing the temperature from 0 K to 1000 K not only reduces the mobility of both electrons and holes but also significantly reduces the lifetime of carriers. We collected the temperature dependence of carrier mobility from experimental reports in the literature and showed that our simulation by computer software result is inherent.