Kremniyda III-V binar birikmalarni shakillantirish shartlari.

Main Article Content

X.M. Iliyev
S.B. Isamov
B.O. Isakov
R. Sobirjonov
V. Sultonov

Abstract

Yorug‘lik diodlari, lazerlar, tezkorligi yuqori bo‘lgan maydonli tranzirtorlar kabi elektron qurilmalar, samaradorligi yuqori bo‘lgan quyosh panellarini ishlab chiqishda asosiy material hisoblanadigan III-V binar birikmali yarimo‘tkazgichlarga bo‘lgan qiziqish tobora ortib bormoqda. Lekin III-V binar birimali yarimo‘tkazgichlar sanoatda hom ashyo sifatida noyob va qimmat material bo‘lganligi sababli, ularni kremniy kabi sanoatda hom ashyo sifatida ulkan zaxiraga ega va olinish texnologiyasi yaxshi o‘zlashtirilgan material asosida shakillantirish dolzarb masalalardan biridir. Shu munosabat bilan ushbu ishda kremniyda III-V binar birikmalarni shakillanish shartlari haqida so‘z yuritilgan.

Article Details

How to Cite
X.M. Iliyev, S.B. Isamov, B.O. Isakov, R. Sobirjonov, & V. Sultonov. (2023). Kremniyda III-V binar birikmalarni shakillantirish shartlari. Fergana State University Conference, 42. Retrieved from https://conf.fdu.uz/index.php/conf/article/view/2292
Section
Physic

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