TO THE THEORY OF VOLT-AMPER CHARACTERISTICS OF THE THREE-LAYER STRUCTURE OF SEMICONDUCTORS IN DIODE SWITCHING
Main Article Content
Abstract
A generalized theory of the current-voltage characteristics of a three-
layer semiconductor structure in a diode inclusion is proposed. It is believed that the
base of this structure is made of compensated semiconductor. The results obtained are
generalized for structures with different conductivities.
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References
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